IIRFP4321 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤15.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Motion Control Applications ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·Hard Switched And High Frequency Circuits ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 78 IDM Drain Current-Single Pulsed 330 PD Total Dissipation @TC=25℃ 310 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.49 40 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4321，IIRFP4321 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=33A IGSS Gate-Source Leakage Current VGS= ±20V IDSS Drain-Source Leakage Current VDS=150V; VGS= 0V VSD Diode forward voltage IS=50A, VGS = 0V MIN TYP MAX UNIT 150 .
IRFP 4321
RFP4321PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching Performance www.DataSheet4U.com l Improved Diode Recovery Improves Switching & EMI Performance l 30V Gate Voltage Rating Improves Robustness l Fully Characterized Avalanche SOA HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID D 150V 12m: 15.5m: 78A D G S G D S TO-247AC D S G Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS (Thermally limited) TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current d Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy e Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Max. 78 c 55 330 310 2.0 ±30 210 -55 to + 175 300 10lbxin (1.1Nxm) Typ. ––– 0.24 ––– Max. 0.49 ––– 40 Units A W W/°C V mJ °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case g Case-to-Sink, Flat, Greased Surface Junction-to-Ambient g Units °C/W www.irf.com 1 6/23/06 IRFP4321PbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS Parameter Drain-to-Source Breakdown Voltage Min. Typ. Max. Units 150 ––– ––– 3.0 ––– ––– ––– –.
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