Drain Source Breakdown Voltage |
250V |
---|---|
Power Dissipation (Pd) |
280W |
Operating Temperature Range |
-55 °C – 150 °C |
IRFP264 N channel is specifically designed for automotive applications that utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. It provides the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
Reviews
There are no reviews yet.